Method and Apparatus for Semi-Automatic Extraction and Monitoring of Diode Ideality in a Manufacturing Environment

ABSTRACT

A method, an apparatus, and a computer program are provided for the semi-automatic extraction of an ideality factor of a diode. Traditionally, current/voltage curves for diodes, which provided a basis for extrapolating the ideality factors, had to be determined by hand. By employing a thermal voltage proportional to absolute temperature (PTAT) generator in conjunction with an extraction mechanism, the ideality factor can be extracted in an semi-automatic manner. Therefore, a reliable, quick, and less expensive device can be employed to improve measurements of ideality factors.

This application is a continuation of application Ser. No. 10/981,157, filed Nov. 4, 2004, status awaiting publication.

FIELD OF THE INVENTION

The present invention relates generally to diode manufacturing, and more particularly, to testing manufactured diodes to determine ideality factors.

DESCRIPTION OF THE RELATED ART

Diodes are non-linear components that have been utilized for a number of years for various devices and applications. For example, bandgap reference circuits, thermal sensor circuits, and current reference circuits employ precision diodes for devices like microprocessors, Digital Signal Processors (DSP), and Analog-to-Digital Converters (ADC). Within such application the forward bias characteristics are important.

While manufacturing diodes within such devices, however, certain characteristics are measured to assist in understanding the forward characteristics of the diodes. Of these factors, one of the more important is the ideality factor. Specifically, the forward bias characteristics are modeled by a current/voltage relationship, which is as follows: I=I_(s)e^(V/nkT), or  (1) V=nkT*ln (I/I _(s))  (2) I_(s) is the reverse bias saturation current of the diode, and n is the ideality factor. T is the absolute temperature, and the measurement is made at room temperature, which is usually on the order of 297 K. Boltzmann's constant is k (k=1.38*10⁻²³ J/K). Hence, kT is typically on the order of 26 mV for room temperature.

For many applications, the ideality factor is closely monitored because variations in the ideality factor can induce errors. Making such precision diodes, though, can be difficult, especially in microprocessor fabrication. For example, in many cases the 3 sigma ideality factor variation can be as high as 2%. Such a large variation, however, is not acceptable for precision applications. Some reasons for the associated difficulties are that the diode fabrication processes are designed to be compatible with Complementary Metal Oxide Semiconductor (CMOS) processes to reduce costs.

Additionally, if the precision diodes are manufactured with Silicon on Insulator (SOI) processes, the manufacture of diodes becomes more difficult. SOI based diodes are usually lateral diodes because lateral diodes are typically the only feasible solution. However, many other contributory factors are added to ideality factor variation in SOI processes, such as silicon layer thickness, surface defects, and doping fluctuations.

To complicated the situation, calculation of the ideality factor of a diode has been an intensive process. To calculate the ideality factors of diodes, the I/V curves of the diodes are measured. Then, curve fitting techniques are applied to the I/V curves determine the ideality factors. The I/V curve process, however, is a manual process and is time consuming. Therefore, there is a need for a method and/or apparatus for determining the ideality factors of diodes that addresses at least some of the problems associated with the conventional processes.

SUMMARY OF THE INVENTION

The present invention provides a method, an apparatus, and a computer program for semi-automatic extraction and monitoring of diode ideality in a manufacturing environment. To determine ideality factors of a diode, a thermal voltage output proportional to temperature (PTAT) are determined by a PTAT generator. An extraction control unit driven by a clock control block then allows for a multiplexer (mux) to receive thermal voltage output and a signal corresponding to said extraction control output. Then based on the output of the mux, a comparator compares the output from the mux to an ideal PTAT value to determine whether the mux output is higher or lower than the ideal PTAT value. A serial shift register then stores to the comparator output.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a block diagram depicting a conventional thermal voltage proportional to absolute temperature (PTAT) generator;

FIG. 2 is a block diagram depicting the ideality factor extraction circuitry;

FIG. 3 is a flowchart depicting the operation of the ideality factor extraction circuitry of FIG. 2;

FIG. 4 is a block diagram depicting a converter circuit; FIG. 5 is a block diagram depicting an alternative converter circuit; and

FIG. 6 is a flow chart depicting the operation of the converter circuitry of FIGS. 4 and 5.

DETAILED DESCRIPTION

In the following discussion, numerous specific details are set forth to provide a thorough understanding of the present invention. However, those skilled in the art will appreciate that the present invention may be practiced without such specific details. In other instances, well-known elements have been illustrated in schematic or block diagram form in order not to obscure the present invention in unnecessary detail. Additionally, for the most part, details concerning network communications, electromagnetic signaling techniques, and the like, have been omitted inasmuch as such details are not considered necessary to obtain a complete understanding of the present invention, and are considered to be within the understanding of persons of ordinary skill in the relevant art.

It is further noted that, unless indicated otherwise, all functions described herein may be performed in either hardware or software, or some combination thereof. In a preferred embodiment, however, the functions are performed by a processor such as a computer or an electronic data processor in accordance with code such as computer program code, software, and/or integrated circuits that are coded to perform such functions, unless indicated otherwise.

Referring to FIG. 1 of the drawings, the reference numeral 100 generally designates a PTAT generator. The PTAT generator 100 comprises a comparator 102, a Positive-channel Metal Oxide Semiconductor Field Effect Transistors (PMOSs) 104, 106, and 108, a first diode 116, a plurality of second diodes 118, and a resistors 110 and 112.

The purpose of the PTAT generator 100 is to measure thermal voltages. To the first order, an ideality factor of a diode is temperature independent. The PTAT can be obtained by the voltage difference between two forward biased diodes with different current densities, which is defined as follows: PTAT=ΔV=nkT*ln (N),  (3) where N is the current density ratio of the two diodes.

To determine this PTAT voltage, the low-voltage PTAT generator outputs a voltage that is related to the PTAT voltage. Two voltages (V_(a) and V_(b)) are input into the comparator 102 through a communication channel 128 and a communication channel 126, respectively. The comparator 102 then outputs a voltage across a communication channel 134, which is connected to the gates of the PMOSs 104, 106, and 108.

The interrelationships of voltages at the sources of each of PMOSs 104, 106, and 108 are indicative of the ideality factor. The first voltage (V_(a)) is voltage at the drain of the PMOS 104 that is coupled to a communication channel 130. The second voltage (V_(b)) is the voltage at the drain of the PMOS 106 that is coupled to a communication channel 132, and a voltage (V_(out)) is the voltage at the drain of the PMOS 108 that is coupled to a communication channel 142.

Achievement of the voltages is accomplished through the connection of various components to the individual gates of the PMOSs 104, 106, and 108. The anode of the first diode 116 is connected to the communication channel 130, while the cathode of the first diode 116 is coupled to ground. The resistor 110, having a value of R₁, is coupled to the communication channel 132 and to the anodes of the second diodes 118 at a communication channel 144. The cathodes of the second diodes 118 are then coupled to ground. The second resistor 112 is then coupled to the communication channel 142 and ground. The value of the second resistor 112 is R₂. The value of the resistor 112 is defined by the following equation: R ₂ =m*R ₁, where mεN.  (4)

Based on all of the values of the voltages and components, the PTAT voltage can be determined. The PTAT voltage is equal to the voltage (V_(out)) at the communication channel 142 for an ideal diode. The value of the voltage (V_(out)) is as follows if the size of the PMOSs 104, 106, and 108 are the same: V _(out) =mnkT*ln (N)=(R ₂/R₁)*nkT*ln (N)  (5)

Because of the offset effects of the operation amplifier, N, the current ratio density ratio of the diodes, should be greater than 10. Also, the resistors can be scaled up or scaled down for power control and other purposes.

To then measure the ideality factors of the second diodes 118 automatically, additional circuitry is employed to make the measurements. Referring to FIGS. 2 and 3 of the drawings, the reference numeral 200 and 300 generally designates ideality factor extraction circuitry and the method of operation of the ideality factor extraction circuitry. The extraction circuitry comprises PTAT generation circuitry 202, a multiplexer (mux) 204, a decoder 220, a comparator 206, a level shifter 232, extraction control circuitry 208, clock control circuitry 210, and an extraction unit 212.

The PTAT generation circuitry 202 is the same circuitry as the PTAT generation circuitry 100 of FIG. 1. However, the voltage divider that comprises the second resistor 112 of FIG. 1 is depicted for the purposes of illustration. Hence, the PTAT generation circuitry 202 comprises a resistor 214, with a value of R₁, a resistor 216, with a value of R₁, and a third resistor 218, with a value of R_(t). Typically, sixteen resistors are employed within the voltage divider, but three are shown for the purposes of illustration. However, there can be as many resistors as desired depending on the use. Also, the resistors can be scaled up or scaled down for power control and other purposes.

Each of the voltages from the voltage divider of the PTAT generator 202 is then utilized for measurement. Voltages from the PTAT generator 202 are transmitted to the mux 204 through communication channels 244, 246, and 248; however, there are as many communication channels as voltage divisions in the voltage divider. The mux 204 then communicates a selected output voltage to the comparator 206 through a communication channel 252. The selection of an output voltage is provided by a decoder 220 through a communication channel 250.

Producing the select signal for the mux, though, involves timing control. Logic 230 provides a clock extraction signal to the extraction control circuit 208 through a communication channel 274. The logic 230 receives a clock signal via communication channel 266, an extraction enable signal via communication channel 268, a miscellaneous control signal via communication channel 270, and an inverted feedback signal from the extraction control circuitry 208 via communication channel 272 in step 302. Once the enable signal is provided to the extraction control circuitry 208, the latch 226 and the register 222 are enabled in step 304. The register 222 then outputs a signal to decoder 220 and to the incrementer 224 and the logic 228 through a communication channel 262 in step 306. The incrementer 224 increments the value and outputs the value to register 222 through a communication channel 260. The logic 228 will then produce a high signal when the extraction operation is completed. The logic 228 forwards its value to the one-bit latch 226 through a communication channel 264. The inverted output of the latch 226 is then fed back to the clock control circuit 210 as the extraction complete signal. The completion signal does not occur, however, until completion of the cycle through the voltage divider chain.

Essentially, the extraction control circuit 208 and the clock control circuit 210 cycle through a fixed number of cycles. Once clocked and enabled, the logic 230 enables the extraction control circuit 208. The register 222 has a length that corresponds to the number of voltage measurements input into the mux 204. When the extraction circuit 208 becomes enabled, the first bit in register 222 is ‘1,’ and the remaining bits are ‘0.’ Each time the register 222 outputs a signal to the decoder 220, the values stored are also incremented by 1 in preparation for the next cycle. When all of the bits of the register 222 becomes ‘1,’ the logic 228 generates a logic high, or ‘1,’ that is transmitted to the latch 226. The inverted signal latch 226 then deactivates the clock control circuit 210, signifying the completion of the extraction.

Based on the output of the decoder 220, the mux then can cycle through the voltages provided by the PTAT generator 202 in step 308. Each voltage is then provided to the comparator 206 at the communication channel 252. Each of the voltages along the voltage divider of the PTAT generator 202, are then compared to a voltage input to the comparator 206 at an communication channel 256. The voltage input to the comparator 206 at the communication channel 256 correlates to an ideal voltage that is known and produced by a precision voltage source (not shown). The ideal voltage is chosen based on the number of voltage divisions and the chosen current density ratio. The comparator 206 compares the two input voltages, outputting a signal to the level shifter 232 at a communication channel 258. The use of a level shifter 232 is optional, however, because the level shifter 232 converts an analog signal to the proper digital signal level. The combination of the level shifter 232 and the comparator 206 determined if the measured voltage along the voltage divider chain is greater than the ideal voltage and outputs a level shifted signal. The level shifted signal is input into the extraction unit 212 through a thirteenth communication channel 276.

The extraction unit 212 then serves to store the related measurements. Serial registers 234, 236, and 238, a Lead Zero Determining circuit (LZD) 240, and a register 242 comprise the extraction unit 212. For each voltage input into the mux there is a corresponding serial register. Each of the serial registers 234, 236, 238, and 242 receive the clock extraction signal through the communication channel 274. Whenever the voltage from the voltage divider is greater than the ideal voltage, a ‘1’ is input into the corresponding serial register and a ‘0’ if the voltage is less than ideal voltage in step 316. Based on the values of the serial registers transmitted through a communication channel 278 to the LZD 240, the LZD 240 determines the register at which there is a transition of the voltage from the voltage divider being greater than the ideal voltage to being less than the ideal voltage in step 318. The LZD 240 then communicates the determination to the register 242 through a communication channel 280 to update the register 242 in step 320. The register 242 then can output the final selection through the communication channel 282. The final selection signal is a mux select signal, though, and not a voltage; however, a voltage can be extrapolated from the final select signal.

The significance of the final selection is that it is determinative of the ideality factor. The final selection corresponds to a voltage along the voltage divider chain of the PTAT generator 202 such that the ideality factor can be calculated. More particularly, the ideality factor of the diodes can be determined from the voltages, which is as follows: n=V _(R) /V _(m),  (6) where V_(m) is the final selection voltage.

The ideality factor extraction circuitry 200 can also be utilized in multiple locations on a wafer to determine ideality factors for a number of diodes. As noted on the PTAT generator 100, there are multiple second diodes 118. However, to be able to measure ideality factors, converter circuitry is employed in combination with the ideality factor extraction circuitry 200. Essentially, the converter circuitry receives an extraction signal from a generation circuit, such as the ideality factor extraction unit 212. Referring to FIGS. 4 and 6 of the drawings, the reference numeral 400 and 600 generally designate converter circuitry and its operation. The converter circuitry 400 comprises a voltage divider 402, muxes 404 and 406, and a decoder 407.

The voltage divider 402 comprises a first resistor 414, with a value of R₁, a second resistor 416, with a value of R₁, and a third resistor 418, with a value of R_(t). Typically, sixteen resistors are employed within the voltage divider, but three are show for the purposes of illustration. However, there can be as many resistors as desired depending on the use. Also, the resistors can be scaled up or scaled down for power control and other purposes.

A voltage from the voltage divider 402 is then selected and measured. Voltages from the voltage divider 402 are transmitted to the mux 404 through communication channels 444, 446, and 448; however, there are as many communication channels as voltage division in the voltage divider. The specific voltage from the voltages 402 that is output by the mux 404 is selected by a selection signal. A selection signal is generated in step 602 provided through a communication channel 411 by the mux 406 to the decoder 407. The decoder 407 then provides a decoded selection signal to the mux 404 through the communication channel 412 in step 604. The mux 404 then outputs a voltage, after selection, through a communication channel 414 in step 606. Then, the supply voltage (V_(R)) divided by the output voltage from the communication channel 414 (V_(M)) is the ideality factor, computed in step 608.

The operation of mux 406 is to provide the correct selection for conversion of a final selection signal to a voltage. The mux 406 receives settings through a communication channel 408. The mux 406 also receives a location select signal through a communication channel 410 that allows the mux 406 to select between the various diodes. Hence, based on the location select signal, the ideality factors of the various diodes on a wafer can be measured.

Additionally, multiple computations can be done at the same time. Referring to FIGS. 5 and 6 of the drawings, the reference numeral 500 and 600 generally designate converter circuitry and its operation. The converter circuitry 500 comprises a voltage divider 502, a muxes 504, 506, and 508, and decoders 505 and 507.

The voltage divider 502 comprises a first resistor 514, with a value of R₁, a second resistor 516, with a value of R₁, and a third resistor 518, with a value of R_(t). Typically, sixteen resistors are employed within the voltage divider, but three are shown for the purposes of illustration. However, there can be as many resistors as desired depending on the use. Also, the resistors can be scaled up or scaled down for power control and other purposes.

A voltage from the voltage divider 502 is then selected and measured. Voltages from the voltage divider 502 are transmitted to the mux 504 through communication channels 544, 546, and 548; however, there are as many communication channels as voltage division in the voltage divider. The specific voltage from the voltages 502 that is output by the mux 504 is selected by a selection signal. A selection signal is generated in step 602 provided through a communication channel 511 by the mux 506 to the decoder 505. The decoder 505 then provides a decoded selection signal to the mux 504 through the communication channel 515 in step 604. The mux 504 then outputs a voltage, after selection, through a communication channel 516 in step 606. Then, the supply voltage (V_(R)) divided by the output voltage from the communication channel 516 (V_(M1)) is the ideality factor, computed in step 608.

The operation of second mux 506, however, is to provide the correct selection signal for conversion of a final selection to a voltage. The second mux 506 receives decoder settings through a sixth communication channel 510. The second mux 506 also receives a location select signal through a seventh communication channel 512 that allows the decoder to select between the various diodes.

In addition to providing a selection signal for the first mux 504, the mux 508 can be added to the loop. Voltages from the voltage divider 502 are transmitted to the mux 508 through communication channels 544, 546, and 548; however, there are as many communication channels as voltage division in the voltage divider. The specific voltage from the voltages 502 that is output by the mux 508 is selected by a selection signal. A selection signal is generated in step 602 provided through a communication channel 513 by the mux 506 to the decoder 507. The decoder 507 then provides a decoded selection signal to the mux 508 through the communication channel 514 in step 604. The mux 508 then outputs a voltage, after selection, through a communication channel 556 in step 606. Then, the supply voltage (V_(R)) divided by the output voltage from the communication channel 556 (V_(M2)) is the ideality factor, computed in step 608.

By utilizing an semi-automated system, ideality factors can be easily determined. Without having to employ previous, and manually intensive, methodologies, quality assurance of semiconductor devices can be greatly improved. The overall efficiency of manufacturing semiconductor devices can be increased by eliminating the previously intensive processes to determine ideality factors of diodes. Therefore, cost can be reduced while increasing the rate of manufacture.

It is understood that the present invention can take many forms and embodiments. Accordingly, several variations may be made in the foregoing without departing from the spirit or the scope of the invention. The capabilities outlined herein allow for the possibility of a variety of programming models. This disclosure should not be read as preferring any particular programming model, but is instead directed to the underlying mechanisms on which these programming models can be built.

Having thus described the present invention by reference to certain of its preferred embodiments, it is noted that the embodiments disclosed are illustrative rather than limiting in nature and that a wide range of variations, modifications, changes, and substitutions are contemplated in the foregoing disclosure and, in some instances, some features of the present invention may be employed without a corresponding use of the other features. Many such variations and modifications may be considered desirable by those skilled in the art based upon a review of the foregoing description of preferred embodiments. Accordingly, it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention. 

1. An apparatus for determining a diode ideality factor of at least one diode in a manufacturing environment, comprising: a PTAT circuit for generating a thermal voltage output proportional to temperature (PTAT); an extraction control unit that generates an extraction control output; a multiplexer (mux) for receiving the thermal voltage output and a signal corresponding to said extraction control output; a comparator for receiving an output from the mux and an ideal PTAT value, wherein the comparator generates a comparator output; and a lead zero determining circuit coupled to the comparator which identifies a selected voltage based on the comparator output, wherein the selected voltage corresponds to a diod ideality factor of the at least one diode. 2-21. (canceled)
 22. A method for identifying a diode ideality factor for at least one diode, comprising: generating a plurality of voltages using the at least one diode based on a supply voltage; selecting a representative voltage from the plurality of voltages based on a determination of a voltage in the plurality of voltages that approximates an ideal voltage; and calculating an ideality factor based on the selected representative voltage and the supply voltage.
 23. The method of claim 22, wherein the ideality factor is calculated as a function relating the supply voltage to the selected representative voltage.
 24. The method of claim 22, further comprising: comparing each voltage in the plurality of voltages to the ideal voltage; determining if each voltage is greater than or less than the ideal voltage; determining a voltage at which there is a transition in the plurality of voltages where a voltage is greater than the ideal voltage to a voltage that is less than the ideal voltage; and selecting the representative voltage based on the determined transition.
 25. The method of claim 24, wherein the plurality of voltages are generated by a thermal voltage output proportional to temperature (PTAT) device, and wherein the ideal voltage is selected based on a number of voltage divisions in the PTAT device and a current density ratio.
 26. The method of claim 25, wherein the PTAT device generates the plurality of voltages based on a voltage difference between at least two forward biased diodes with different current densities.
 27. The method of claim 22, wherein calculating the ideality factor comprises dividing the supply voltage by the selected representative voltage.
 28. The method of claim 22, wherein the method is applied to a plurality of diodes at a plurality of different locations on a integrated circuit device wafer.
 29. The method of claim 28, further comprising: receiving an input specifying a particular location on the integrated circuit device wafer that is selected for which the method is to be applied.
 30. An apparatus for identifying a diode ideality factor for at least one diode, comprising: a voltage generation circuit comprising at least one diode, wherein the voltage generation circuit generates a plurality of voltages using the at least one diode based on a supply voltage; and a representative voltage selection circuit that selects a representative voltage from the plurality of voltages based on a determination of a voltage in the plurality of voltages that approximates an ideal voltage, wherein an ideality factor is calculated based on the selected representative voltage and the supply voltage.
 31. The apparatus of claim 22, wherein the ideality factor is calculated as a ratio of the supply voltage to the selected representative voltage.
 32. The apparatus of claim 30, further comprising: a comparator coupled to the voltage generation circuit, the comparator comparing each voltage in the plurality of voltages to the ideal voltage to thereby identify whether each voltage is greater than or less than the ideal voltage; a determination circuit coupled to the comparator, wherein the determination circuit determines a representative voltage at which there is a transition in the plurality of voltages where a voltage is greater than the ideal voltage to a voltage that is less than the ideal voltage; and a register coupled to the determination circuit that stores a selection value indicative of the representative voltage based on the determined transition.
 33. The apparatus of claim 32, wherein the voltage generation circuit is a thermal voltage output proportional to temperature (PTAT) circuit, and wherein the ideal voltage is selected based on a number of voltage divisions in the PTAT circuit and a current density ratio.
 34. The apparatus of claim 33, wherein the PTAT circuit generates the plurality of voltages based on a voltage difference between at least two forward biased diodes with different current densities.
 35. The apparatus of claim 30, wherein the apparatus operates on a plurality of diodes at a plurality of different locations on a integrated circuit device wafer.
 36. The apparatus of claim 35, further comprising: a location selection circuit that receives an input specifying a particular location on the integrated circuit device wafer that is selected on which the apparatus is to operate.
 37. A computer program product in a computer readable medium, the computer program product comprising a computer readable program which, when executed by a computing device, causes the computing device to: generate a plurality of voltages using the at least one diode based on a supply voltage; select a representative voltage from the plurality of voltages based on a determination of a voltage in the plurality of voltages that approximates an ideal voltage; and calculate an ideality factor based on the selected representative voltage and the supply voltage.
 38. The computer program product of claim 37, wherein the ideality factor is calculated as a ratio of the supply voltage to the selected representative voltage.
 39. The computer program product of claim 37, wherein the computer readable program further causes the computing device to: compare each voltage in the plurality of voltages to the ideal voltage; determine if each voltage is greater than or less than the ideal voltage; determine a voltage at which there is a transition in the plurality of voltages where a voltage is greater than the ideal voltage to a voltage that is less than the ideal voltage; and select the representative voltage based on the determined transition.
 40. The computer program product of claim 37, wherein the computer readable program is executed by the computing device on a plurality of diodes at a plurality of different locations on a integrated circuit device wafer. 